| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-excited oscillation type semiconductor device, wherein even when it is operated at a high temperature, it is possible to make a sufficient self-excited oscillation operation. SOLUTION: A p-clad layer 105 is composed of two layers having a different carrier concentration, and a Zn dope amount of a p-clad layer 105B on the far side from an active layer 104 is set to be lower than a p-clad layer 105A on the close side to the active layer 104. In this manner, a concentration distribution is formed in the p-clad layer 105, whereby a concentration of the p-clad layer 105B is set to an optimum film thickness and carrier concentration in which a current does not spread, at the time of the high temperature also, and further in a concentration of the p-clad layer 105A, Zn is doped so that Zn does not diffuse in the active layer 104 and an overflow of a carrier can be suppressed even at the time of the high temperature. COPYRIGHT: (C)2008,JPO&INPIT
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