ELECTROSTATIC DISCHARGE PROTECTION DEVICE OF OUTPUT DRIVER STAGE
摘要
<p>Provided is an electrostatic discharge (ESD) protection device of an output driver stage of a semiconductor chip. The ESD protection device of an output driver stage, which includes a p-channel metal-oxide-semiconductor (PMOS) transistor having a source connected to a first source voltage and an n-channel metal-oxide-semiconductor (NMOS) transistor having a source connected to a second source voltage, the MOS transistors having gates applied with output signals from an internal circuit and drains connected to the output pad, wherein a distance between contacts formed on a drain region and a gate poly of the MOS transistors is relatively greater than a value according to a predetermined design rule.</p>
申请公布号
WO2009028800(A1)
申请公布日期
2009.03.05
申请号
WO2008KR04410
申请日期
2008.07.29
申请人
SILICON WORKS CO., LTD;JEONG, HONG SEOK;HAN, DAE KEUN;KIM, DAE SEONG