发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Example embodiments provide a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may include a lower electrode including a first lower electrode and a second lower electrode, and the second lower electrode may be formed on at least a part of the first lower electrode using a material different from the first lower electrode. A dielectric film may be formed on at least a part of the second lower electrode and a first upper electrode may be formed on the dielectric film.
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申请公布号 |
US2009072349(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20080232145 |
申请日期 |
2008.09.11 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
TAK YONG-SUK;CHUNG JUNG-HEE;KIM JIN-YONG;KIM WAN-DON;KIM YOUNG-SUN |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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