发明名称 Semiconductor device and method of manufacturing the same
摘要 Example embodiments provide a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may include a lower electrode including a first lower electrode and a second lower electrode, and the second lower electrode may be formed on at least a part of the first lower electrode using a material different from the first lower electrode. A dielectric film may be formed on at least a part of the second lower electrode and a first upper electrode may be formed on the dielectric film.
申请公布号 US2009072349(A1) 申请公布日期 2009.03.19
申请号 US20080232145 申请日期 2008.09.11
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 TAK YONG-SUK;CHUNG JUNG-HEE;KIM JIN-YONG;KIM WAN-DON;KIM YOUNG-SUN
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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