发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, and a substrate processing apparatus, excellent in particle reducing effectiveness and improving productivity. SOLUTION: The method of manufacturing the semiconductor device includes a manufacturing step to load a wafer 10 into a reactor 1, a manufacturing step to form a membrane on the wafer 10 inside the reactor 1, a manufacturing step to unload the wafer 10 from the reactor 1 after the membrane is formed on the wafer 10, and a manufacturing step of, after the wafer 10 is unloaded, forcibly cooling an interior of the reactor 1 without the wafer 10 inside the reactor 1, by using forcibly cooling mechanism 40 arranged covering the reactor 1 outside the reactor 1. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009135541(A) 申请公布日期 2009.06.18
申请号 JP20090064091 申请日期 2009.03.17
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SUZAKI KENICHI;O KETSU
分类号 H01L21/318;C23C16/44;H01L21/31 主分类号 H01L21/318
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