| 摘要 |
An image sensor as a photoelectric conversion device includes a substrate, a photodiode, a transistor, and a planarizing layer, the photodiode, the transistor, and the planarizing layer are disposed above the substrate, the planarizing layer includes an opening section, a tilted section disposed so as to surround the opening section, and a flat section adapted to cover the transistor, the photodiode is formed in the opening section, and a reflecting film is formed above the tilted section and the flat section of the planarizing layer. |
| 主权项 |
1. A photoelectric conversion device comprising:
a substrate; a photodetection element; a transistor; and an insulating layer, wherein the photodetection element, the transistor, and the insulating layer are disposed above the substrate, the insulating layer includes an opening section, a first part disposed so as to surround the opening section, and a second part adapted to cover the transistor, the photodetection element is formed in the opening section, and a metal film is formed above the first part of the insulating layer and above the second part of the insulating layer. |
