| 发明名称 |
NON-VOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A non-volatile memory cell includes a substrate, an erase gate disposed on the substrate and having a top plane, two floating gates disposed respectively at both sides of the erase gate, two control gates disposed respectively on two floating gates, and two select gates disposed respectively at outer sides of the two floating gates, where the two select gates have tilted top planes which are symmetric to each other. |
| 申请公布号 |
US2016163722(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514596227 |
申请日期 |
2015.01.14 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chang Yuan-Hsiang;Chen Aaron;YANG JIANJUN;Chang Chih-Chien |
| 分类号 |
H01L27/115;H01L29/66;H01L21/321;H01L21/28;H01L21/02;H01L21/3213;H01L29/788;H01L29/423 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory cell, comprising:
a substrate; two stack structures disposed on said substrate, wherein each said stack structure comprises a floating gate and a control gate on said floating gate; an erase gate disposed on said substrate between said two stack structures, wherein said erase gate comprises a top plane; and two select gates disposed respectively at outer sides of said two stack structures, wherein said two select gates comprise tilted top planes which are symmetric to each other. |
| 地址 |
Hsin-Chu City TW |
