METHOD OF FORMING A BICMOS SEMICONDUCTOR CHIP THAT INCREASES THE BETAS OF THE BIPOLAR TRANSISTORS

摘要

The betas of the bipolar transistors in a BiCMOS semiconductor structure are increased by forming the emitters of the bipolar transistors with two implants: a source-drain implant that forms a first emitter region at the same time that the source and drain regions are formed, and an additional implant that forms a second emitter region at the same time that another region is formed. The additional implant has an implant energy that is greater than the implant energy of the source-drain implant.

主权项

1. A method of forming a BiCMOS semiconductor structure, the method comprising:
simultaneously forming a shallow base n-well of an pnp bipolar transistor structure, a shallow emitter n-well of an npn bipolar transistor structure, and a shallow body n-well of a PMOS transistor structure in a semiconductor material; and simultaneously forming an n+ source region and an n+ drain region of an NMOS transistor structure, and an n+ emitter region of the npn bipolar transistor structure in the semiconductor material, the n+ emitter region touching the shallow emitter n-well.