| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
In one embodiment, a semiconductor device includes a first insulator, and conductors and second insulators alternately provided on the first insulator. Each second insulator of the second insulators has a first side face adjacent to one of the conductors via a first air gap, a second side face adjacent to one of the conductors via a second air gap, first lower faces in contact with the first insulator, and second lower faces provided above the first insulator via third air gaps. |
| 申请公布号 |
US2016163581(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514641718 |
申请日期 |
2015.03.09 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOSHIDA Kiyomitsu |
| 分类号 |
H01L21/768;H01L23/532;H01L23/528 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first insulator; and conductors and second insulators alternately provided on the first insulator, each second insulator of the second insulators comprising: a first side face adjacent to one of the conductors via a first air gap; a second side face adjacent to one of the conductors via a second air gap; first lower faces in contact with the first insulator; and second lower faces provided above the first insulator via third air gaps. |
| 地址 |
Minato-ku JP |
