| 摘要 |
The present invention relates to a method for growing a silicon carbide monocrystal, which comprises the following steps of: enabling a seed attached to a seed connection rod to be adjacent to the growth surface of the seed in a molten solution including Si and C stored in a crucible; and applying a direct current to the seed and the crucible. In addition, the present invention relates to an apparatus for growing a silicon carbide monocrystal, which comprises: a crucible in which a raw material including Si and C are stored; a resistance heater for covering the crucible; a seed positioned on the upper unit of the crucible, and moved up and down by the seed connection rod; and a direct current power device for connecting an anode to the seed and the cathode to the crucible. |
