| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing a silicon-containing two-layer resist comprising a first resist layer containing an organic high molecular compound and a photosensitive silicon-containing second resist layer for reworking after the patterning of the second resist layer while suppressing the occurrence of defects on a wafer in removal in a process for producing a device using the two-layer resist on a substrate. SOLUTION: When the top of a substrate is coated with a first resist layer containing an organic high molecular compound and a photosensitive second resist layer containing silicon atoms in this order, the second resist layer is exposed and developed to form a pattern and then the first and second resist layers are removed, the second resist layer is removed by a wet method with a solution based on N-methylpyrrolidone and then the first resist layer is subjected to ashing treatment with oxygen or an oxygen-containing gaseous mixture. |
