Hochleistungs-, Hochspannungs-, nicht-epitaxialer Bipolartransistor,申请号DE19956027031T-传众专利搜索

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发明名称	Hochleistungs-, Hochspannungs-, nicht-epitaxialer Bipolartransistor
摘要
申请公布号	DE69527031(T2)	申请公布日期	2002.11.14
申请号	DE19956027031T	申请日期	1995.12.18
申请人	MOTOROLA, INC.	发明人	TAM, GORDON;TAM, PAK
分类号	H01L29/73;H01L21/331;H01L29/08;H01L29/10;H01L29/732;(IPC1-7):H01L29/732	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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