| 摘要 |
A method for producing silicon is provided. The silicon production method comprises the step (i) of reducing a halosilane represented by the formula (1) with a metal <?in-line-formulae description="In-line Formulae" end="lead"?>SiHnX4-n (1)<?in-line-formulae description="In-line Formulae" end="tail"?> wherein n is an integer of 0 to 3, X is at least one selected from F, Cl, Br and I, with the proviso that plural Xs may be the same or different from each other, wherein said metal has a melting point of not higher than 1300° C. and takes a liquid phase of spherical or thin film shape in the reduction of the halosilane, with the proviso that when the liquid phase is in the shape of sphere, the relationships (A), (B) and (C) are satisfied wherein r is radius (mum) of the sphere, t is reduction time (min) and x is reduction temperature (° C.), while when the liquid phase is in the shape of thin film, the relationships (A'), (B') and (C) are satisfied wherein r' is thickness (mum) of the thin film, t is reduction time (min) and x is reduction temperature (° C.): <?in-line-formulae description="In-line Formulae" end="lead"?>ln (r/√t)<=(10.5-7000/(x+273)) (A)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>ln (r'/√t)<=(10.5-7000/(x+273)) (A')<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>1<=r<=250 (B)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>1<=r'<=500 (B')<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>400<=x<=1300 (C)<?in-line-formulae description="In-line Formulae" end="tail"?> |
