NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF

摘要

A non-volatile memory including a substrate, a first stacked structure, a second stacked structure, a fifth conductive layer, a first doped region, and a second doped region is provided. The first stacked structure includes a first conductive layer and a second conductive layer stacked on the substrate in order and isolated from each other. The second stacked structure is separately disposed from the first stacked structure and includes a third conductive layer and a fourth conductive layer stacked on the substrate in order and connected to each other. The fifth conductive layer is disposed on the substrate at one side of the first stacked structure away from the second stacked structure. The first doped region is disposed in the substrate below the fifth conductive layer. The second doped region is disposed in the substrate at one side of the second stacked structure away from the first stacked structure.

主权项

1. A non-volatile memory, comprising:
a substrate; a first stacked structure, comprising a first conductive layer and a second conductive layer, wherein the first conductive layer and the second conductive layer are stacked on the substrate in order and isolated from each other; a second stacked structure separately disposed from the first stacked structure, and comprising a third conductive layer and a fourth conductive layer, wherein the third conductive layer and the fourth conductive layer are stacked on the substrate in order and connected to each other; a fifth conductive layer disposed on the substrate at one side of the first stacked structure away from the second stacked structure; a first doped region disposed in the substrate below the fifth conductive layer; and a second doped region disposed in the substrate at one side of the second stacked structure away from the first stacked structure.