| 发明名称 |
METHOD OF MANUFACTURING A PHOTOELECTRIC AND THERMOELECTRIC SENSOR, AND PHOTOELECTRIC AND THERMOELECTRIC SENSOR |
| 摘要 |
A method of manufacturing a photoelectric and thermoelectric sensor includes the steps of: preparing a silicon substrate and an etching solution that includes hydrofluoric acid, isopropyl alcohol and deionized water; performing electrochemical etching on the silicon substrate in the etching solution to obtain a porous silicon substrate; and forming on the porous silicon substrate an electrode unit that is connected to the porous silicon substrate and that is adapted for being connected to an external circuit. |
| 申请公布号 |
US2016197211(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201514818381 |
申请日期 |
2015.08.05 |
| 申请人 |
National Chi Nan University |
发明人 |
HSIAO Kuei-Sen;TSAI Chao-Yang;CHENG Sheng-Lin;CHANG Chin-Kai |
| 分类号 |
H01L31/0224;H01L35/08;H01L35/34;H01L31/18 |
主分类号 |
H01L31/0224 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of manufacturing a photoelectric and thermoelectric sensor, comprising the steps of:
preparing a silicon substrate and an etching solution that includes hydrofluoric acid, isopropyl alcohol and deionized water; performing electrochemical etching on the silicon substrate in the etching solution to obtain a porous silicon substrate; and forming on the porous silicon substrate an electrode unit that is connected to the porous silicon substrate and that is adapted for being connected to an external circuit. |
| 地址 |
Puli TW |
