SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form a gate electrode achieving high shape controllability by multiple patterning while inhibiting erosion of a gate insulation film and a gate electrode.SOLUTION: A semiconductor device manufacturing method comprises: patterning a hard mask formed on a gate film by using a first mask pattern; processing the patterned hard mask film to a gate pattern by using a second mask pattern; patterning the gate film by using the hard mask film as a mask to form a spacer insulation film; forming on the spacer insulation film, a third mask pattern which covers ends of the gate pattern; etching the spacer insulation film by using the third mask pattern as a mask to form sidewall insulation films on sidewall parts of the gate film while remaining the spacer insulation film in regions of the ends of the gate pattern.