SEMICONDUCTOR STRUCTURE WITH EXTENDING GATE STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the substrate. The semiconductor structure further includes an isolation structure formed around the fin structure and a gate structure formed across the fin structure. In addition, the gate structure includes a first portion formed over the fin structure and a second portion formed over the isolation structure, and the second portion of the gate structure includes an extending portion extending into the isolation structure.

主权项

1. A semiconductor structure, comprising:
a substrate; a fin structure formed over the substrate; an isolation structure formed around the fin structure; a gate structure formed across the fin structure; and a spacer formed on a sidewall of the second portion of the gate structure, wherein: the gate structure comprises a first portion formed over the fin structure and a second portion formed over the isolation structure, and the second portion of the gate structure comprises an extending portion extending into the isolation structure, and a dielectric layer is disposed between the spacer and the isolation structure.