Method for Manufacturing Semiconductor Device

摘要

A method for manufacturing a semiconductor device is provided. The method comprises steps as follows. At least one trench is provided in a low-k dielectric layer on a substrate. The trench is filled with a copper (Cu) film. Pure cobalt (Co) is deposited on a surface of the Cu film by introducing a flow of a carrier gas carrying a Co-containing precursor and a reducing agent onto the surface of the Cu film. The flowrate of the flow is within a range from 5 to 19 sccm.

主权项

1. A method for manufacturing a semiconductor device, comprising steps of:
providing at least one trench in a low-k dielectric layer on a substrate, said trench being filled with a copper (Cu) film; and depositing pure Co on a surface of said Cu film by introducing a flow of a carrier gas carrying a Co-containing precursor and a reducing agent onto said surface of said Cu film; wherein the flowrate of said flow is within a range from 5 to 19 sccm.