Self-Aligned Patterning Process

摘要

Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including forming a plurality of spacers over a first hard mask layer to form a first mask pattern, and forming a first photoresist over the plurality of spacers. The method further includes patterning the first photoresist to form a second mask pattern, and patterning the first hard mask layer using the first mask pattern and the second mask pattern in a same patterning step.

主权项

1. A method comprising:
forming a second hard mask layer over a first hard mask layer; patterning the second hard mask layer using a first patterned photoresist as a mask; forming spacers on sidewalls of the patterned second hard mask layer and over the first hard mask layer; forming and patterning a second photoresist over the spacers and the first hard mask layer; and patterning the first hard mask layer using the spacers and the patterned second photoresist.