| 发明名称 |
PULSED PLASMA FOR FILM DEPOSITION |
| 摘要 |
Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating. |
| 申请公布号 |
US2016276150(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201615073444 |
申请日期 |
2016.03.17 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Xue Jun;Godet Ludovic;Nemani Srinivas;Stowell Michael W.;Liang Qiwei;Buchberger Douglas A. |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of processing a substrate disposed in a processing chamber, comprising:
(a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source, wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating. |
| 地址 |
Santa Clara CA US |
