SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device such as an IGBT having a wide area of safe operation.SOLUTION: A semiconductor device comprises: a first region and a second region which are formed on a surface of an nsubstrate 103 on an emitter electrode 104 side and the first region and the second region are isolated by a trench 105; an nsource 111 and a pcontact layer 112a which are formed on the surface in the first region and at least a part of which is constituted to contact the emitter electrode 104; a p base layer 113a formed below the nsource 111 and the pcontact layer 112a and an n barrier layer 114 formed under the p base layer 113a; a pcontact layer 112b which is formed on the surface in the second region and at least a part of which is constituted to contact the emitter electrode 104; and a p base layer 113b formed below the pcontact layer 112b and an n field concentration layer 115 which is formed under the p base layer 113b and has a carrier concentration higher than that of the n barrier layer 114.SELECTED DRAWING: Figure 1