THROUGH ELECTRODE, MANUFACTURING METHOD OF THE SAME, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a through electrode, including an organic sidewall insulating film, capable of eliminating a barrier layer and satisfying mechanical reliability and electrical reliability, a manufacturing method of the same, a semiconductor device, and a manufacturing method of the same.SOLUTION: The through electrode is formed on a semiconductor substrate and includes: a copper layer formed on the semiconductor substrate; and a sidewall insulating film, represented by a formula (1), provided between the copper layer and the semiconductor substrate, in contact with the copper layer and the semiconductor substrate.SELECTED DRAWING: None