发明名称 |
LIGHT RECEIVING SENSOR, AND PHOTOELECTRIC TRANSDUCER AND IMAGE SENSING DEVICE PROVIDED THEREWITH |
摘要 |
PROBLEM TO BE SOLVED: To provide a light receiving sensor wherein generated carriers are made easy to transfer to a depletion layer. SOLUTION: This light receiving sensor is provided with a semiconductor layer 102 of a first conductivity type and a semiconductor layer 103 of a second conductivity type, and detects incidence of a light by using a junction part 105 formed of the first and the second semiconductor layers 102, 103. The semiconductor layer 102 of a first conductivity type is so constituted that impurity concentration is increased as leaving from the semiconductor layer 103 of a second conductivity type and transfers generated carriers to the junction part 105.
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申请公布号 |
JP2001326378(A) |
申请公布日期 |
2001.11.22 |
申请号 |
JP20000145342 |
申请日期 |
2000.05.17 |
申请人 |
CANON INC |
发明人 |
NODA TOMOYUKI;SHINOHARA MASATO |
分类号 |
H01L27/14;H01L31/10;H04N5/335;H04N5/369;(IPC1-7):H01L31/10 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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