SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To form a thin film having characteristics such as low dielectric constant, high etching resistance and high leakage resistance.SOLUTION: In a semiconductor device manufacturing method, by performing a cycle predetermined times, which includes: a process of supplying a first processing gas containing a predetermined element and halogen to a substrate; a process of supplying a second processing gas containing carbon and nitrogen to the substrate; a process of supplying a third processing gas containing carbon to the substrate; and a process of supplying a fourth processing gas different from any of the processing gases to the substrate, a film containing at least the predetermined element and carbon is formed on the substrate.