| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel-type magnetism detection element and a manufacturing method therefor which reduce an RA (resistance area) and increase a resistance change rate (ΔR/R). SOLUTION: In the tunnel-type magnetism detection element, among layers composing a free magnetic layer 6 formed on an insulating barrier layer 5 made of such an insulating oxide as titanium oxide, an enhance layer 6a is formed to be in contact with the insulating barrier layer 5. Under the insulating barrier layer 5, a second fixed magnetic layer 4c composing a fixed magnetic layer 4 is formed. The second fixed magnetic layer 4c is formed into a face-centered cubic structure in which a ä111} face is oriented in priority in the direction parallel with the layer surface. The insulating barrier layer 5 is formed into a rutile-type structure, etc. The enhance layer 6a is formed into a body-centered cubic structure in which a ä110} face is oriented in priority in the direction parallel with the layer surface. This enables a reduction in the RA and an increase in the resistance change rate (ΔR/R). COPYRIGHT: (C)2007,JPO&INPIT
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