发明名称 |
SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY HAVING IT, IMAGE FORMING DEVICE HAVING EITHER THE ELEMENT OR THE ARRAY, LIGHT PICKUP APPARATUS HAVING EITHER THE ELEMENT OR THE ARRAY, LIGHT TRANSMITTING MODULE HAVING EITHER THE ELEMENT OR THE ARRAY, LIGHT TRANSMITTING/RECEIVING MODULE HAVING EITHER THE ELEMENT OR THE ARRAY AND LIGHT COMMUNICATION SYSTEM HAVING BOTH THE ELEMENT AND THE ARRAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting laser element which exhibits a high output and has an excellent characteristic of temperature. SOLUTION: The surface-emitting laser element has a reflection layer 102 composed of a semiconductor-distributed Bragg reflector. The reflection layer 102 is formed on a substrate, and is composed of a structure in which a layer 1021 of low index of refraction and a layer 1022 of high index of refraction are alternately laminated. The number of layers of the layer 1021 of low index of refraction and the layer 1022 of high index of refraction is periods of 40.5. Each of film thicknesses of the layer 1021 of low index of refraction and the layer 1022 of high index of refraction is one fourth of an oscillating wavelengthλof the surface-emitting laser element. The layer 1021 of low index of refraction is composed of n-Al<SB>0.9</SB>Ga<SB>0.1</SB>As, and the layer 1022 of high index of refraction is composed of n-Ga<SB>0.5</SB>In<SB>0.5</SB>P of the smallest thermal resistivity among AlGaInP lattice-matching with GaAs. COPYRIGHT: (C)2007,JPO&INPIT
|
申请公布号 |
JP2007221020(A) |
申请公布日期 |
2007.08.30 |
申请号 |
JP20060041897 |
申请日期 |
2006.02.20 |
申请人 |
RICOH CO LTD |
发明人 |
SATO SHUNICHI;JIKUTANI NAOTO |
分类号 |
H01S5/125 |
主分类号 |
H01S5/125 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|