| 摘要 |
PROBLEM TO BE SOLVED: To provide a depositing method and a depositing device, which are capable of forming a silicon oxide film high in insulating property. SOLUTION: In a first reaction chamber 1, alkyl siloxane compound 5 and ozone are mixed at a temperature lower than a temperature whereat the alkyl siloxane compound and ozone form the silicon oxide film through thermal reaction degradation, and a first temperature whereat the precursor substance of the silicon oxide film is produced to obtain reactant gas containing the precursor substance while a substrate 6, on which the silicon oxide film is to be formed, is disposed in a second reaction chamber 2. Then the temperature of the reactant gas is controlled so as to be a second temperature, higher than a temperature whereat the alkyl siloxane compound and ozone form the silicon oxide film through thermal reaction degradation to form the silicon oxide film on the substrate. COPYRIGHT: (C)2007,JPO&INPIT
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