SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents a degradation of characteristics due to a facet. SOLUTION: The semiconductor device comprises an element isolation region 12; a semiconductor element region 11 which is prescribed by the element isolation region 12, and has a channel forming part 11a and a recess formed between the element isolation region 12 and the channel forming part 11a; and an epitaxial semiconductor 19 formed in the recess. The semiconductor element region 11 has a wall 11b between the element isolation region 12 and the epitaxial semiconductor 19. COPYRIGHT: (C)2007,JPO&INPIT