SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To prevent fluctuation in threshold voltage and improve short channel effect. SOLUTION: The semiconductor device comprises a first conductive first semiconductor region 11, a second conductive first MIS transistor HV-NMOS formed within the first semiconductor region 11, a second conductive second semiconductor region 14, and a first conductive second MIS transistor LV-PMOS formed within the second semiconductor device 14. A first gate insulating layer 16 of the first MIS transistor HV-NMOS is thicker than the second gate insulating layer 23 of the second MIS transistor LV-PMOS. A profile of a first conductive impurity in a channel region 25 of the second MIS transistor LV-PMOS has a plurality of peaks. COPYRIGHT: (C)2007,JPO&INPIT