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发明名称
MAGNETORESISTIVE ELEMENT IN PARTICULAR MEMORY ELEMENT OR LOGIC ELEMENT AND METHOD FOR WRITING INFORMATION TO SUCH AN ELEMENT
摘要
申请公布号
EP1864290(A1)
申请公布日期
2007.12.12
申请号
EP20060723859
申请日期
2006.03.30
申请人
UNIVERSITAET DUISBURG-ESSEN
发明人
CHEN, XI;HOCHSTRAT, ANDREAS;KLEEMANN, WOLFGANG;BORISOV, PAVEL
分类号
G11C11/16
主分类号
G11C11/16
代理机构
代理人
主权项
地址
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