| 摘要 |
<p>A flat display device and its manufacturing method are provided to control an s-factor value by differing an interlayer dielectric of a pixel from that of a circuitry. A flat display device includes a circuitry having a first thin film transistor and a pixel having a second thin film transistor. The first and second thin film transistors have a semiconductor layer with channel regions(221a,221b), gate electrodes(240a,240b) positioned on the semiconductor layer, and a first interlayer dielectric(241) positioned on the gate electrode. The first thin film transistor has a second interlayer dielectric(242) positioned on the first interlayer dielectric. The second interlayer dielectric is formed on the entire surface of the substrate except for the semiconductor layer of the second thin film transistor.</p> |
