SEMICONDUCTOR DEVICE WITH ADVANCED PAD STRUCTURE RESISTANT TO PLASMA DAMAGE AND METHOD FOR FORMING THE SAME

摘要

A connecting structure for bonding semiconductor devices and a forming method are provided. A bonding structure comprises an Alpad structure (that is, a connecting pad containing thick aluminum) and a sub structure under an aluminum-containing contact pad including at least a pre-metal layer and a barrier layer. The pre-metal layer is a high-density material layer and a low-surface illuminance layer and contains the density higher than the barrier layer. The high-density metal conductive layer prevents damaged plasma from charging a dielectric material placed under the structure or destroying a semiconductor device located below.