发明名称 SHORT-CIRCUIT CHARGE-SHARING TECHNIQUE FOR INTEGRATED CIRCUIT DEVICES
摘要 A short-circuit charge-sharing technique which allows charge-sharing between two or more circuits with a simple shorting transistor controlled to achieve the desired operating voltage levels. The shorting transistor which can be either a P-channel Metal Oxide Semiconductor (PMOS) or an N-channel Metal Oxide Semiconductor (NMOS) device and can be controlled utilizing the same clock that enables the drive of the signals between which charge-sharing occurs. In operation, the desired operating voltage levels can be regulated by increasing and decreasing the pulse width of the control circuit output to the gate of the shorting transistor.
申请公布号 US2009072879(A1) 申请公布日期 2009.03.19
申请号 US20070855091 申请日期 2007.09.13
申请人 UNITED MEMORIES, INC.;SONY CORPORATION 发明人 PARRIS MICHAEL C.;HARDEE KIM C.
分类号 H03L5/00 主分类号 H03L5/00
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