| 摘要 |
A method of depositing a kesterite film which includes a compound of the formula: Cu2−xZn1+ySn(S1−zSez)4+q, wherein 0≦̸x≦̸1; 0≦̸y≦̸1; 0≦̸z≦̸1; −1≦̸q≦̸1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided. |
