CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a crystalline AlGaO semiconductor having a film thickness of 500 nm or more.SOLUTION: Disclosed is a crystalline oxide semiconductor film which includes an oxide semiconductor containing at least aluminum and gallium as the main component by swirling mist or droplets to generate a swirl flow when mist or droplets generated by atomizing a raw material solution 4a or forming droplets of the raw material solution 4a are conveyed to a base 10 installed in a film forming chamber 7 by carrier gas 2a, 2b and mist or droplets are made thermally react on the base to form films. The crystalline oxide semiconductor film is formed having a film thickness of 500 nm or more.SELECTED DRAWING: Figure 1