| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film and a device for forming a silicon nitride film which enable the increase in resistance against wet etching.SOLUTION: A method for forming a silicon nitride film comprises: a loading step where a semiconductor wafer W is loaded into a reaction tube 2; a silicon nitride film-forming step where the silicon nitride film is formed on the semiconductor wafer W loaded into the reaction tube 2; a carbon purge step where a hydrocarbon compound including an unsaturated bond is supplied into the reaction tube 2 to terminate, by carbon, the surface of the formed silicon nitride film; and an unloading step where the semiconductor wafer W with the silicon nitride film formed thereon, in which the surface of the silicon nitride film is terminated by carbon, is unloaded out of the reaction tube 2.SELECTED DRAWING: Figure 1 |
