发明名称 CRYSTAL LAMINATE STRUCTURE, AND PRODUCTION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a crystal laminate structure having a β-GaOsingle crystal film grown by a growth method of β-GaOand capable of growing a β- GaOsingle crystal film with a high quality and a large diameter efficiently, and a production method therefor.SOLUTION: According to one embodiment, provided are a crystal laminate structure manufactured by a growing method of a β-GaOsingle crystal film by the HVPE method comprising the step of exposing a GaOsubstrate 10 to a gallium chloride gas and an oxygen containing gas to grow a β-GaOsingle crystal film 12 on the principal face 11 of the β-GaOsingle crystal film at a growing temperature of 900°C or higher on the GaOsubstrate 10, and a manufacturing method therefor.SELECTED DRAWING: Figure 2
申请公布号 JP2016183107(A) 申请公布日期 2016.10.20
申请号 JP20160143092 申请日期 2016.07.21
申请人 TAMURA SEISAKUSHO CO LTD;TOKYO UNIV OF AGRICULTURE & TECHNOLOGY 发明人 GOTO TAKESHI;SASAKI KOHEI;KOKETSU AKINORI;KUMAGAI YOSHINAO;MURAKAMI TAKASHI
分类号 C30B29/16 主分类号 C30B29/16
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