发明名称 |
CRYSTAL LAMINATE STRUCTURE, AND PRODUCTION METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a crystal laminate structure having a β-GaOsingle crystal film grown by a growth method of β-GaOand capable of growing a β- GaOsingle crystal film with a high quality and a large diameter efficiently, and a production method therefor.SOLUTION: According to one embodiment, provided are a crystal laminate structure manufactured by a growing method of a β-GaOsingle crystal film by the HVPE method comprising the step of exposing a GaOsubstrate 10 to a gallium chloride gas and an oxygen containing gas to grow a β-GaOsingle crystal film 12 on the principal face 11 of the β-GaOsingle crystal film at a growing temperature of 900°C or higher on the GaOsubstrate 10, and a manufacturing method therefor.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016183107(A) |
申请公布日期 |
2016.10.20 |
申请号 |
JP20160143092 |
申请日期 |
2016.07.21 |
申请人 |
TAMURA SEISAKUSHO CO LTD;TOKYO UNIV OF AGRICULTURE & TECHNOLOGY |
发明人 |
GOTO TAKESHI;SASAKI KOHEI;KOKETSU AKINORI;KUMAGAI YOSHINAO;MURAKAMI TAKASHI |
分类号 |
C30B29/16 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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