| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving heavy current.SOLUTION: The semiconductor device is so configured that a plurality of normally-on semiconductor elements (41, 51), having effective areas (42, 52) and ineffective areas (43, 53) are disposed in the same package, and the ineffective areas (43, 53) are formed on mutually facing surface sides of the plurality of normally-on semiconductor elements (41, 51).SELECTED DRAWING: Figure 1 |
