发明名称 LIGHT EMITTING DIODE HAVING ISLAND-TYPE INTERLAYER AND MANUFACTURING METHOD THEREOF
摘要 An LED is provided to enhance the brightness, to reduce an operation voltage and to decrease a tensile strain by improving the density and mobility of electrons using an island type insertion layer. An LED includes a light emissive structure composed of an N-GaN layer(12), an active layer and a P-GaN layer. An island type insertion layer(13) is interposed between the N-GaN layer and the active layer. The island type insertion layer is used for lessening a tensile strain between the N-GaN layer and the active layer. The insertion layer is made of one selected from a group consisting of InN, AlN, GaN or the composition thereof.
申请公布号 KR20060131329(A) 申请公布日期 2006.12.20
申请号 KR20050051673 申请日期 2005.06.16
申请人 LG ELECTRONICS INC.;LG INNOTEK CO., LTD. 发明人 SHIN, YOO RI
分类号 H01L33/12;H01L33/20 主分类号 H01L33/12
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