发明名称 |
Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same |
摘要 |
A driver circuit for an integrated circuit device includes a transistor that has a gate terminal, a source terminal, and a bulk substrate terminal. The source terminal is connected to the bulk substrate terminal. A pull-up circuit is connected between a power supply node and the source terminal. The pull up circuit is configured to increase a voltage at the source terminal and the bulk substrate terminal of the transistor responsive to a control signal.
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申请公布号 |
EP1885066(A2) |
申请公布日期 |
2008.02.06 |
申请号 |
EP20070250892 |
申请日期 |
2007.03.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JON-HYUN;LEE, KYU-CHAN;YIM, SUNG-MIN;SHIN, DONG-HAK |
分类号 |
H03K19/0185;H03K19/00;H03K19/003 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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