发明名称 Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
摘要 A driver circuit for an integrated circuit device includes a transistor that has a gate terminal, a source terminal, and a bulk substrate terminal. The source terminal is connected to the bulk substrate terminal. A pull-up circuit is connected between a power supply node and the source terminal. The pull up circuit is configured to increase a voltage at the source terminal and the bulk substrate terminal of the transistor responsive to a control signal.
申请公布号 EP1885066(A2) 申请公布日期 2008.02.06
申请号 EP20070250892 申请日期 2007.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JON-HYUN;LEE, KYU-CHAN;YIM, SUNG-MIN;SHIN, DONG-HAK
分类号 H03K19/0185;H03K19/00;H03K19/003 主分类号 H03K19/0185
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