发明名称 ORGANO-MAGNETORESISTIVE SENSOR AND USES THEREOF
摘要 <p>#CMT# #/CMT# The arrangement has an organic electronic thin layer component e.g. organic field-effect transistor, with three layers, three different electrical contacts and a magnetic field-generating device, where one of the layers of the organic electronic thin layer component is structured. The arrangement is formed in such a manner that the magnetic field-generating device causes a magneto-resistive change in the thin layer component. #CMT#USE : #/CMT# Used for position measurement during linear movement and rotary motion, and for angular measurement and current measurement over the magnetic field (claimed). Can also be used as a hall sensor. #CMT#ADVANTAGE : #/CMT# The arrangement is manufactured economically and in mass production. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a structure of an organic field-effect transistor. 1 : Substrate 2 : Lower electrode layer 3 : Insulator 4 : Semiconductor layer 5, 6 : Source/drain electrodes.</p>
申请公布号 EP2010928(A2) 申请公布日期 2009.01.07
申请号 EP20070728209 申请日期 2007.04.18
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 PAETZOLD, RALPH;SCHMID, GUENTER
分类号 G01R33/09 主分类号 G01R33/09
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