| 摘要 |
A method for fabricating interlayer dielectric in semiconductor device is provided to prevent bending phenomenon of the bit line stack due to the soft property of the flowing film and bury the bit lines having narrow width between them by using the flowing film with a superior gap fill characteristic. A method for fabricating interlayer dielectric in semiconductor device is comprised of steps: forming the bit line stack(420) having a bottom structure on the semiconductor substrate(400); forming a first liner HDP oxidation layer by supplying the HDP deposition source on the bit line stack; arranging the second liner HDP oxidation layer(435) on the side of the bit line stack by etching the first liner HDP oxidation layer; filling the space above the exposed semiconductor substrate between the second liner HDP oxidation layer with the flowing film; pre-heating is performed before forming the first liner HDP oxidation layer. |
