发明名称 Image Sensor and Method for Manufacturing the Same
摘要 Provided is an image sensor. In the image sensor, a transistor region is on a substrate, and a photo diode region is at one side of the transistor region. A dielectric layer is formed on the transistor region and the photo diode region. A metal line is formed on the dielectric layer in the transistor region. A color filter is formed on the dielectric layer in the photo diode region.
申请公布号 US2009072282(A1) 申请公布日期 2009.03.19
申请号 US20080210159 申请日期 2008.09.12
申请人 LEE SUN CHAN 发明人 LEE SUN CHAN
分类号 H01L31/00;H01L21/00 主分类号 H01L31/00
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