| 摘要 |
The invention relates to a photocathode including an input window (210) suitable for receiving a flow of incident photons, and an active layer (230), the active layer consisting of a plurality of elementary layers (2301, 2302)made of semiconductor materials having decreasing forbidden bandwidths in the direction of the flow of incident photons. The surface of the photocathode opposite the input window is structured so that each elementary layer of the active layer has its own photoelectric emission surface (2401, 2402). By choosing the semiconductor materials of the elementary layers, it is possible to obtain an image which has high sensitivity in both the visible spectrum and the near infrared. |
