MAGNETIC MEMORY ELEMENT AND MEMORY DEVICE

摘要

According to one embodiment, a magnetic memory element includes a stacked structure. The stacked structure includes a first and a second stacked member. The first stacked member includes a first and second ferromagnetic layer. A magnetic resonance frequency of the second ferromagnetic layer is a first frequency. A direction of a magnetization of the second ferromagnetic layer is settable to a direction of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member. The direction of the magnetization of the second ferromagnetic layer does not change when the second current smaller than the first current flows in the first stacked member. The second stacked member includes a third ferromagnetic layer. A magnetization of the third ferromagnetic layer can generate a magnetic field of the first frequency by the second current.

主权项

1. A magnetic memory element, comprising:
a stacked structure including
a first stacked member including
a first ferromagnetic layer,a second ferromagnetic layer, anda first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,a magnetic resonance frequency of the second ferromagnetic layer being a first frequency, a direction of a magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member along a first direction connecting the first ferromagnetic layer and the second ferromagnetic layer, the direction of the magnetization of the second ferromagnetic layer not changing to a direction corresponding to an orientation of a second current smaller than the first current when the second current flows in the first stacked member, anda second stacked member stacked with the first stacked member along the first direction, the second stacked member including a third ferromagnetic layer, a magnetization of the third ferromagnetic layer being able to generate a magnetic field of the first frequency by the second current flowing in the second stacked member along the first direction, the direction of the magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a current by causing the current to flow in the first stacked member and the second stacked member along the first direction to generate a magnetic field acting on the second ferromagnetic layer.