| 摘要 |
PROBLEM TO BE SOLVED: To improve the flexibility of process design of a heteroepitaxial growth film, by reducing the restriction on thickness of the film, required to make compatible relief of stress of the film and suppression of a density of crystal defects that are generated with the relief and grow up to the surface of the film. SOLUTION: A first single-crystal semiconductor layer 12, having different lattice constant and/or thermal expansion coefficient from those of a single-crystal semiconductor substrate 10, is grown on the substrate 10, then the layer 12 is subjected to heat treatment in a reducing atmosphere containing hydrogen, thereby planarizing a surface of the layer 12, localizing crystal defects in a region 14 near an interface to the substrate 10, and consequently, relieving the stress applied to a region 16 near the surface. In a second growth process, subsequent to the heat treatment process, since the first single-crystal semiconductor layer 12 as a base is relieved in stress, a second single-crystal semiconductor layer 18, having different lattice constant and/or thermal expansion coefficient from those of the first single-crystal semiconductor layer 12, is applied with stress; and a high-quality strain semiconductor substrate is obtained. COPYRIGHT: (C)2006,JPO&NCIPI
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