| 摘要 |
A method of manufacturing a semiconductor device of the present invention has the steps of forming a pattern made of a processed film or a resist on a substrate, washing the pattern with a washing liquid which is a liquid including at least water, spreading an amphophilic material that has a hydrophilic group and a hydrophobic group on the surface of the washing liquid remaining on the substrate after washing the pattern, and drying the substrate to remove the washing liquid on the substrate after spreading the amphophilic material. When moisture is removed in the drying step, molecules of the amphophilic material are spread on the surface of the washing liquid, so that the surface tension of the washing liquid is reduced to prevent the pattern from inclining.
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