METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line in a semiconductor device is provided to prevent the generation of voids on an interface between the metal line and a contact plug by enhancing a coating characteristic of the metal line. An insulating layer for exposing a part of a first conductive layer(110) through a contact hole is formed on a substrate. A contact plug(115) is formed in the inside of the contact hole in order to expose a part of an inner sidewall of the contact hole. An opening(117) of the contact hole is enlarged by etching a part of the insulating layer. A second conductive layer connected with the contact plug is deposited to bury the contact hole.