| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the oxidation at an interface between a tungsten silicide layer and an oxide layer by forming a nitride layer at sidewalls of a gate. A gate electrode pattern(120) is formed on a semiconductor substrate(100) having an isolation region(110). A nitride layer(130) is formed at both sidewalls of the gate pattern by using rapid thermal annealing. An oxide layer is then formed on the resultant structure. The RTA is carried out under NH3, N2O, and NO atmosphere.
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