| 摘要 |
A thin film manufacturing apparatus and a thin film deposition method using the same are provided to reduce an atomic deposition process time by supplying continuously a source gas, a purge gas, and a reaction gas. A substrate supporting unit(20) is installed in a reaction chamber(10). A substrate is loaded on the substrate supporting unit. A gas injection unit(100) includes a plurality of gas injection parts for injecting a plurality of gases from an upper part of the reaction chamber to the substrate. A plasma generation unit(200) is connected with at least one of the plurality of gas injection units. The substrate supporting unit includes at least one susceptor for loading the substrate and a rotary shaft for rotating thee substrate supporting unit.
|
