| 摘要 |
PROBLEM TO BE SOLVED: To enable improving light-receiving sensitivity of a back-illuminated solid-state imaging device.SOLUTION: A solid-state imaging device includes: a plurality of photoelectric conversion regions for photoelectric-converting light incident from a rear-surface side of a semiconductor substrate; an element isolation region formed between the plurality of photoelectric conversion regions disposed in a matrix shape; and shading members formed on a top surface of the element isolation region. The element isolation region has a high-impurity-concentration region with a high impurity concentration connected to at least a part of the shading member. This technique can be applied to, for example, a back-illuminated solid-state imaging device. |
